TEC-503 VLSI TECHNOLOGY Books and References
TEC-503 VLSI TECHNOLOGY
UNIT 1.
Introductin to VLSI Technology: Classification if ICs, Scale of integration, semiconductor and hybrid ICs Features of ICs,
CRYSTAL GROWTH: monolithic and hybrid ICs, crystal growth, Czochralski technique of crystal growth, wafer preparation and specifications, testing, measurements of parameters of crystals,Fabrication steps,
OXIDATION: Theory of growth of Silicon di oxide layer, calculation of SiO2 thickness and oxidation kinetics, Dry wet and high pressure oxidation, plasma oxidation, properties of oxidation, defects induced due to oxidation.
UNIT 2.
EPITAXIAL PROCESS: Epitaxy and its concept, Growth kinetics of epitaxy, epitaxial growth,Lowtemperature epitaxy, Si-epitaxy- growth chemistry of Si epitaxial layer, autodoping apparatus for
epitaxial layer, apparatus for epitaxy, MBE system
DIFFUSION PROCESS: Diffusion models of solid, Ficks theory of diffusion, Solution of Fick`s law,diffusion parameters measurements schemes, Ion implantation- Scattering phenomenon, range theory, channeling, implantation damage, ion-implantation systems, Annealing
UNIT 3.
LITHOGRAPHY: photolithography and pattern transfer, Optical and non optical lithigraphy,electron, X-ray and ion-beam lithography, contact/proximity and projection printers, alignment.
Photoresist and ETCHING:Types of photoresist, polymer and materials, Etching- Dry & Wet etching, basic regimes of plasma etching, reactive ion etching and its damages, lift-off, and sputter etching.
UNIT 4.
METALLIZATION: Applications and choices, physical vapor deposition, patterning, problem areas.
VLSI PROCESS INTEGRATION: PMOS,NMOS and CMOS IC technology, MOS memory IC technology, bipolar IC fabrication.
UNIT 5.
ASSEMBLY TECHNIQUE AND PACKAGING: Package types, packaging design consideration, VLSI
assembly technologies.
YIELD AND RELIABILITY: Yield loss in VLSI, yield loss modeling, reliability requirements,accelerated testing.
SUGGESTED BOOKS:
1. S.M. Sze (Ed.) / VLSI Technology / M Hill. 1988.
2. R. K. SINGH /VLSI (Technology, Design & Basic Of Micro Elec.), Kataria & Sons
3. S.A. Campbell / The Science and Engineering of Microelectronic Fabrication / Oxford University Press
4. Microelectronic Circuits International Student Edition by Sedra / Smith
UNIT 1.
Introductin to VLSI Technology: Classification if ICs, Scale of integration, semiconductor and hybrid ICs Features of ICs,
CRYSTAL GROWTH: monolithic and hybrid ICs, crystal growth, Czochralski technique of crystal growth, wafer preparation and specifications, testing, measurements of parameters of crystals,Fabrication steps,
OXIDATION: Theory of growth of Silicon di oxide layer, calculation of SiO2 thickness and oxidation kinetics, Dry wet and high pressure oxidation, plasma oxidation, properties of oxidation, defects induced due to oxidation.
UNIT 2.
EPITAXIAL PROCESS: Epitaxy and its concept, Growth kinetics of epitaxy, epitaxial growth,Lowtemperature epitaxy, Si-epitaxy- growth chemistry of Si epitaxial layer, autodoping apparatus for
epitaxial layer, apparatus for epitaxy, MBE system
DIFFUSION PROCESS: Diffusion models of solid, Ficks theory of diffusion, Solution of Fick`s law,diffusion parameters measurements schemes, Ion implantation- Scattering phenomenon, range theory, channeling, implantation damage, ion-implantation systems, Annealing
UNIT 3.
LITHOGRAPHY: photolithography and pattern transfer, Optical and non optical lithigraphy,electron, X-ray and ion-beam lithography, contact/proximity and projection printers, alignment.
Photoresist and ETCHING:Types of photoresist, polymer and materials, Etching- Dry & Wet etching, basic regimes of plasma etching, reactive ion etching and its damages, lift-off, and sputter etching.
UNIT 4.
METALLIZATION: Applications and choices, physical vapor deposition, patterning, problem areas.
VLSI PROCESS INTEGRATION: PMOS,NMOS and CMOS IC technology, MOS memory IC technology, bipolar IC fabrication.
UNIT 5.
ASSEMBLY TECHNIQUE AND PACKAGING: Package types, packaging design consideration, VLSI
assembly technologies.
YIELD AND RELIABILITY: Yield loss in VLSI, yield loss modeling, reliability requirements,accelerated testing.
SUGGESTED BOOKS:
1. S.M. Sze (Ed.) / VLSI Technology / M Hill. 1988.
2. R. K. SINGH /VLSI (Technology, Design & Basic Of Micro Elec.), Kataria & Sons
3. S.A. Campbell / The Science and Engineering of Microelectronic Fabrication / Oxford University Press
4. Microelectronic Circuits International Student Edition by Sedra / Smith
